材料成形與模具技術(shù)國(guó)家重點(diǎn)實(shí)驗(yàn)室
“追擊材料前沿,展示名師風(fēng)采”
“杰出學(xué)者講壇”學(xué)術(shù)報(bào)告
報(bào)告題目: How to Determine the Potential Barrier Height at the Grain Boundaries in Ion-conducting Oxides
時(shí)間與地點(diǎn):2015年5月19日 上午10:00 先進(jìn)制造大樓西樓A308室
Prof. Sangtae Kim
Dept. of Chemical Engineering and Materials Science
Director, Nano-Electroceramics Lab
Educational Background:
B.S., 1988,
M.S., 1990,
Ph.D., 1999,
Postdoctor, Max Planck Institute for
RESEARCH INTERESTS:
n Defect Chemistry of Grain Boundaries
n Defect Chemistry of Electrolyte Thin Films
n Electrical Properties of 2D Materials
Recently a new model for ionic current across blocking grain boundaries was developed by Prof. Sangtae Kim’s research group. They demonstrate the applicability of the linear diffusion model recently proposed for the current–voltage, Igb–Ugb, characteristics of blocking grain boundaries in solid electrolytes to various oxygen-ion and proton conductors: the model precisely reproduces theIgb–Ugb characteristics of La-, Sm-, Gd-, and Y-doped ceria as well as Y-doped barium zirconate to provide accurate explanations to the “power law” behavior of the Igb–Ugb relationship, i.e. Igb ∝ Ugbn, experimentally observed. The model also predicts that the grain-boundary potential, Ψgb, in doped ceria weakly depends on temperature, if the trapped charge remains constant, and that the value of Ψgb can be determined from the value of the power n. Furthermore, the model provides a plausible explanation for the increase in the Ψgb with temperature observed for the proton conductor in which the concentration of the charge carrier decreases with temperature. Hence, it is evident that the linear diffusion model is robust and applicable to grain boundaries in a large variety of practically important solid electrolytes.
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